Analysis of the Active Region of Overheating Temperature in Green LEDs Based on Group III Nitrides

For the first time, the overheating temperature ∆Tp–n of the active region in green light-emitting diodes based on Group III nitrides has been determined as a function of the forward current amplitude I. It has been shown that in contrast to light-emitting diodes, in which the current–voltage characteristics are adequately described by known theories of rectification in p–n junctions and ∆Tp–n ∝ I, in the structures under study, the dependence ∆Tp–n(I) in the current range of 2 × 10–3–3 × 10–2 A is quadratic in current. At higher currents, the variation of ∆Tp–n with I in the green light-emitting diodes based on Group III nitrides becomes linear, which is the same as in the light-emitting diodes based on known infrared and red III–V structures. © 2001 MAIK “Nauka/Interperiodica”.